Silicon nanowire polytypes: Identification by raman spectroscopy, generation mechanism, and misfit strain in homostructures

ACS Nano

Volumn 5, Issue 11, 2011, Pages 8958-8966

  Lopez, Francisco J ^a   Givan, Uri ^b   Connell, Justin G ^a   Lauhon, Lincoln J ^a  

^a Northwestern University   (United States)

^b NONE

Author keywords

grain boundary; homostructure; polytype; Raman spectroscopy; silicon nanowire

Indexed keywords

BASIC BUILDING BLOCK; CRYSTALLOGRAPHIC INFORMATION; FIRST-PRINCIPLES CALCULATION; FREQUENCY DIFFERENCES; GENERATION MECHANISM; HEXAGONAL PLANES; HOMOSTRUCTURE; HOMOSTRUCTURES; IN-PLANE LATTICE PARAMETERS; INCOHERENT TWIN; INTRINSIC STACKING FAULT; LATTICE MISFITS; MISFIT STRAINS; PARTIAL DISLOCATIONS; PHONON FREQUENCIES; POLYTYPE; POLYTYPES; RAMAN FREQUENCIES; RAMAN MICROSCOPY; RAMAN MODES; RAMAN SPECTRUM; ROUGH ESTIMATION; SILICON NANOWIRE; SILICON NANOWIRES; STRAIN-INDUCED SHIFTS;

CALCULATIONS; CAPACITANCE; GRAIN BOUNDARIES; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

EID: 81855183290     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2031337     Document Type: Article

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