Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique

Journal of Crystal Growth

Volumn 280, Issue 3-4, 2005, Pages 419-424

  Kitamura, Masayuki ^a   Usami, Noritaka ^a   Sugawara, Takamasa ^a   Kutsukake, Kenrato ^a   Fujiwara, Kozo ^a   Nose, Yoshitaro ^a   Shishido, Toetsu ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A2. Floating zone technique; A2. Seed crystals; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; FLOATING PUMPING PLANTS; GRAIN BOUNDARIES; HIGH TEMPERATURE OPERATIONS; INTERFACIAL ENERGY; SOLAR CELLS; ULTRAHIGH VACUUM;

CASTING METHOD; FLOATING ZONE TECHNIQUE; MULTICRYSTALLINE SI; SEED CRYSTALS;

SEMICONDUCTING SILICON;

EID: 20444428332     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.049     Document Type: Article

References (9)

1. T. Saitoh, Proceedings of the Third World Conference on Photovoltaic Energy Conversion, vol. 25, 2003.
2. K. Nakajima, N. Usami, K. Fujiwara, Y. Nose, unpublished.
3. G. Martinelli, and R. Kibizov Appl. Phys. Lett. 62 1993 3263
4. A.L. Endrös Sol. Energ. Mater. Sol. Cells 72 2002 109
5. T. Watanabe Res. Mech. 11 1984 47
6. T. Watanabe, T. Hirano, T. Ochiai, and H. Oikawa Mater. Sci. Forum 157-162 1994 1103
7. K.T. Aust, U. Erb, and G. Palumbo Mater. Sci. Eng. A 176 1994 329
8. E.M. Lehockey, G. Palumbo, P. Lin, and A. Brennenstuhl Metall. Mater. Trans. A 29 1998 387
9. T. Watanabe, and S. Tsurekawa Acta Mater. 47 1999 4171