Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope

Applied Physics Letters

Volumn 97, Issue 21, 2010, Pages

  Gu, Lin ^a,b   Yu, Yan ^c   Sigle, Wilfried ^a   Usami, Noritaka ^d   Tsukimoto, Susumu ^b   Maier, Joachim ^c   Ikuhara, Yuichi ^b,e   Van Aken, Peter A ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b TOHOKU UNIVERSITY   (Japan)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^d TOHOKU UNIVERSITY   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

9R POLYTYPE; BAND GAPS; BANDGAP TRANSITION; CONDUCTION-BAND MINIMUM; MACRO POROUS SILICON; MACROPOROUS SI; TRANSMISSION ELECTRON MICROSCOPE; VALENCE ELECTRON ENERGY-LOSS SPECTROSCOPIES; ZONE BOUNDARIES;

ELECTRON MICROSCOPES; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; ENERGY GAP; POROUS SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 78649550412     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3518703     Document Type: Article

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