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Volumn 89, Issue 5, 2006, Pages

Dielectric discontinuity at structural boundaries in Si

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; OPTOELECTRONIC DEVICES; PERMITTIVITY; SILICON; STACKING FAULTS;

EID: 33748470991     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335584     Document Type: Article
Times cited : (17)

References (34)
  • 29
    • 33748469519 scopus 로고    scopus 로고
    • note
    • Little contribution of the lattice polarization to the static dielectric constant was noticed for the Si(111) slab.
  • 31
    • 33748443575 scopus 로고    scopus 로고
    • note
    • B.
  • 32
    • 33748444540 scopus 로고    scopus 로고
    • edited by O. Madelung (Springer, Berlin, Heidelberg)
    • Semiconductors-Basic Data, edited by O. Madelung (Springer, Berlin, Heidelberg, 1996), p. 20.
    • (1996) , pp. 20
    • Data, S.-B.1
  • 33
    • 33748456505 scopus 로고    scopus 로고
    • note
    • It has been well known that GGA generally underestimates the energy gap, see, for example, Ref. 9.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.