Ab initio study of structural and electronic properties of planar defects in Si and SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 19, 2004, Pages 1-12

  Raffy, C ^a,b   Furthmuller J ^a   Wagner, J M ^a   Bechstedt, F ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; METAL; SILICON;

AB INITIO CALCULATION; ARTICLE; BULK DENSITY; CHEMICAL BOND; COVALENT BOND; CRYSTAL; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELD; ELECTRON; FILM; MATHEMATICAL ANALYSIS; MATHEMATICAL COMPUTING; QUANTUM MECHANICS; VAPOR;

EID: 12444337514     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.195344     Document Type: Article

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