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Volumn 110, Issue 9, 2011, Pages

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

(12) Kirste, Ronny a Collazo, Ramn b Callsen, Gordon a Wagner, Markus R a Kure, Thomas a Sebastian Reparaz, Juan a Mita, Seji c Xie, Jinqiao c Rice, Anthony b Tweedie, James b Sitar, Zlatko b Hoffmann, Axel a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b North Carolina State University (United States)

c HexaTech Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELEVATED TEMPERATURE; EMISSION AREA; HIGH EFFICIENCY DEVICES; INVERSION DOMAIN BOUNDARIES; LOW TEMPERATURES; MICRO PHOTOLUMINESCENCE; RECOMBINATION PROCESS; SPECTROSCOPY MEASUREMENTS; STRONG LUMINESCENCE; STRUCTURAL AND OPTICAL PROPERTIES; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; THEORETICAL MODELS; THERMALIZATION EFFECTS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 81355132380 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3656987 Document Type: Article

Times cited : (48)

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