Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution

Advanced Materials

Volumn 20, Issue 11, 2008, Pages 2162-2165

  Liu, Fude ^a,c   Collazo, Ramon ^a   Mita, Seiji ^a   Sitar, Zlatko ^a   Pennycook, Stephen J ^b   Duscher, Gerd ^b  

^a North Carolina State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CORUNDUM; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; MILLING (MACHINING); SAPPHIRE; SEMICONDUCTING GALLIUM;

ABERRATION CORRECTORS; ANGSTROM RESOLUTIONS; CARRIER GASES; DIRECT OBSERVATIONS; GAN FILMS; GROWTH PROCESSES; INVERSION DOMAIN BOUNDARIES; LOW-VOLTAGE; MECHANICAL GRINDING; MILLING METHODS; OAK RIDGE NATIONAL LABORATORIES; PROBE SIZES; STEM IMAGES; V/III RATIOS;

SPECIMEN PREPARATION;

EID: 55049120844     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200702522     Document Type: Article

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