Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4397-4400

  Zhang, J X ^a,b   Qu, Y ^b   Chen, Y Z ^b   Uddin, A ^b   Chen, P ^c   Chua, S J ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Defect; Gallium nitride; MOCVD; Photoluminescence

Indexed keywords

ELECTRONIC STRUCTURE; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS;

DONOR-ACCEPTOR TRANSITIONS; OPTICAL PHONONS; SILICON SUBSTRATES; SUPERLATTICE LAYERS;

FILM GROWTH;

EID: 33847020505     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.111     Document Type: Article

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