Gold-free GaAs nanowire synthesis and optical properties

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 819-828

  Morral, A Fontcuberta I ^a,b  

^a EPFL   (Switzerland)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Catalyst free; gold free; growth mechanisms; molecular beam epitaxy (MBE); nanowires

Indexed keywords

CATALYST-FREE; FUTURE APPLICATIONS; GAAS; GROWTH MECHANISMS; MATERIAL QUALITY; MOLECULAR BEAM EPITAXY (MBE); NANOWIRE SYNTHESIS; POTENTIAL NEGATIVE EFFECTS; SELECTIVE AREA EPITAXY;

CATALYSTS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; GOLD; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING GALLIUM;

OPTICAL PROPERTIES;

EID: 80051692362     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2091259     Document Type: Review

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