Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O 3 stacked structure

Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

  Kaneko, Yukihiro ^a,b   Nishitani, Yu ^a   Tanaka, Hiroyuki ^a   Ueda, Michihito ^a   Kato, Yoshihisa ^a   Tokumitsu, Eisuke ^b   Fujii, Eiji ^a  

^a PANASONIC CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CONDUCTANCE; CHANNEL LENGTH; CORRELATED MOTIONS; DOMAIN WALL MOTION; DOMAIN WALL VELOCITIES; ELECTRON CHANNEL; FAST OPERATION; GATE ELECTRODES; PB(ZR , TI)O; POLARIZATION REVERSALS; PZT; SHORT PULSE; SOURCE AND DRAIN ELECTRODES; STACKED STRUCTURE; SWITCHING DYNAMICS; ZNO;

ELECTRODES; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRICITY; LEAD; OXIDE FILMS; THIN FILM TRANSISTORS; TRANSISTORS; ZINC OXIDE; ZIRCONIUM;

DOMAIN WALLS;

EID: 80655139061     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3651098     Document Type: Article

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