SCOPUS 정보 검색 플랫폼

Physical Review Letters

Volumn 89, Issue 9, 2002, Pages 976011-976014

Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films

(4) Tybell, T a Paruch, P a Giamarchi, T b Triscone, J M c

a UNIVERSITY OF GENEVA (Switzerland)

b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Norway)

c CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; COMPUTATIONAL METHODS; CREEP; ELECTRIC FIELDS; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; GROUND STATE; LEAD COMPOUNDS; NUCLEATION; PARAMETER ESTIMATION; PEROVSKITE; SINGLE CRYSTALS;

DOMAIN WALL MOTION;

THIN FILMS;

EID: 0037179387 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (522)

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