Proposal for a new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2190-2193

  Hirooka, Gen ^a   Noda, Minoru ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Ferroelectric; Ferroelectric gate FET; Interface conduction; Nonvolatile memory; SBT

Indexed keywords

CHANNEL CAPACITY; DIELECTRIC PROPERTIES; ELECTRIC CONDUCTANCE; ELECTRIC INSULATORS; ELECTRODES; FERMI LEVEL; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; SEMICONDUCTOR INSULATOR BOUNDARIES; THRESHOLD VOLTAGE;

FERROELECTRIC GATE FET; INTERFACE CONDUCTION; JUNCTION PROPERTIES; NONVOLATILE MEMORY;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 3142645268     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2190     Document Type: Conference Paper

References (10)

1. J. L. Moll and Y. Tarui: IEEE Trans. Electron Devices ED-10 (1963) 338.
2. S. Xiong, S. Sakai, K. Ishii, S. Migita, K. Sakamaki, H. Ota and E. Suzuki: J. Appl. Phys. 94 (2003) 2559.
3. D. Ito, N. Fujimura, T. Yoshimura and T. Ito: J. Appl. Phys. 93 (2003) 5563.
4. M. Takahashi, H. Sugiyama, T. Nakaiso, K. Kodama, M. Noda and M. Okuyama: Jpn. J. Appl. Phys. 40 (2001) 2923.
5. E. Tokumitsu, G. Fujii and H. Ishiwara: Jpn. J. Appl. Phys. 39 (2000) 2125.
6. K. Kodama, M. Takahashi, D. Richinschi, A. I. Lerescu, M. Noda and M. Okuyama: Jpn. J. Appl. Phys. 41 (2002) 2639.
7. M. Noda, K. Kodama, I. Ikeuchi, M. Takahashi and M. Okuyama: Jpn. J. Appl. Phys. 42 (2003) 2055.
8. M. Okuyama: Japan Patent 141814 (2002).
9. Y. Watanabe and A. Masuda: Jpn. J. Appl. Phys. 40 (2001) 5610.
10. J. F. Scott: Ferroelectric Memories (Springer, Berlin, 2000) Chap. 4, p. 82.