Fabrication and characterization of ferroelectric gate field-effect transistor memory based on ferroelectric-insulator interface conduction

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 11, 2006, Pages 8608-8610

  Lee, Bong Yeon ^a   Minami, Takaki ^a   Kanashima, Takeshi ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Ferroelectric; Ferroelectric gate fET; Interface conduction; Memory; PZT

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC INSULATORS; FERROELECTRIC DEVICES; HYSTERESIS LOOPS; INTERFACES (MATERIALS); LEAD COMPOUNDS;

FERROELECTRIC GATE FET; FERROELECTRIC-INSULATOR INTERFACE; INTERFACE CONDUCTION;

FIELD EFFECT TRANSISTORS;

EID: 34547878750     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8608     Document Type: Article

References (5)

1. S. Y. Wu: Ferroelectric 11 (1976) 379.
2. K. Kodama, M. Takahashi, D. Richinschi, A. I. Lerescu, M. Noda and M. Okuyama: Jpn. J. Appl. Phys. 41 (2002) 2639.
3. M. Okuyama: Japan Patent Application No. 141814 (2002).
4. G. Hirooka, M. Noda and M. Okuyama: Jpn. J. Appl. Phys. 43 (2004) 2190.
5. Y. Watanabe, M. Okano and A. Masuda: Phys. Rev. Lett. 86 (2001) 332.