Use of ferroelectric gate insulator for thin film transistors with ITO channel

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 305-308

  Tokumitsu, E ^a   Senoo, M ^a   Miyasako, T ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

(Bi,La)4Ti3O12; Ferroelectric film; Ferroelectric gate transistor; ITO; Nonvolatile memory; Thin film transistor

Indexed keywords

FERROELECTRIC DEVICES; FERROELECTRIC THIN FILMS; GATES (TRANSISTOR); NONVOLATILE STORAGE; REMANENCE; SEMICONDUCTING INDIUM COMPOUNDS; SILICON; SOL-GELS;

(BI,LA)4TI3O12; FERROELECTRIC FILM; FERROELECTRIC-GATE TRANSISTOR; ITO; NONVOLATILE MEMORY;

THIN FILM TRANSISTORS;

EID: 19944382499     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.017     Document Type: Conference Paper

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