A ferroelectric gate field effect transistor with a ZnO/Pb(Zr,Ti)O 3 heterostructure formed on a silicon substrate

Japanese Journal of Applied Physics

Volumn 47, Issue 9 PART 2, 2008, Pages 7527-7532

  Tanaka, Hiroyuki ^a   Kaneko, Yukihiro ^a   Kato, Yoshihisa ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Epitaxial growth; Ferroelectric; Ferroelectric gate field effect transistor; Oxide semiconductor; Pb(Zr,Ti)O3; Polish; SrRuO3; SrTiO3; Two dimensional electron gas; ZnO

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; DRAIN CURRENT; ELECTRON GAS; EPITAXIAL GROWTH; FERROELECTRIC DEVICES; FERROELECTRICITY; MOLECULAR BEAM EPITAXY; PHOTORESISTS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; PLATINUM; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; SURFACE ROUGHNESS; TRANSISTORS; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS; ZINC ALLOYS; ZINC OXIDE; ZIRCONIUM; ELECTRIC CONDUCTIVITY OF GASES; ELECTRONS; LEAD ALLOYS; STRONTIUM ALLOYS;

FERROELECTRIC; FERROELECTRIC GATE FIELD EFFECT TRANSISTOR; OXIDE SEMICONDUCTOR; PB(ZR,TI)O3; SRRUO3; SRTIO3; ZNO; POLISH;

FIELD EFFECT TRANSISTORS;

EID: 55149083300     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7527     Document Type: Article

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