Device physics of ferroelectric thin-film memories

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2272-2274

  Scott, J F ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Electrodes; Ferroelectrics; Lead zirconate titanate; Memories; PZT; Thin films

Indexed keywords

EID: 0000089992     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2272     Document Type: Article

References (13)

1. M. Copel, P. R. Duncombe, D. A. Neumayer, T. M. Shaw and R. M. Tromp: Appl. Phys. Lett. 70 (1997) 3227.
2. D. J. Wouters et al.: Microclectron. Eng. 29 (1995) 249.
3. S. Kurtin, T. C. McGill and C. A. Mead: Phys. Rev. Lett. 22 (1970) 1433.
4. L. J. Brillson: Surf. Sci. 300 (1994) 909.
5. G. W. Dietz et al.: J. Appl. Phys. 82 (1997) 2359.
6. A. J. Hartmann, K. Watanabe, R. N. Lamb and I. F. Scott: to be published in Integr. Ferroelecr. (1998).
7. M. Schluter: Phys. Rev. B 17 (1978) 5044.
8. J. Robertson and C. W. Chen: to be published in MRS Proc. (1998).
9. D. V. Geppert: J. Appl. Phys. 33 (1962) 2993.
10. C. S. Hwang et al.: J. Appl. Phys. 83 (1998) 3703.
11. P. Mark and T. E. Hartman: J. Appl. Phys. 39 (1968) 2163.
12. C. S. Hwang et al.: Integr. Ferroelecr. 13 (1996) 157.
13. P. W. M. Blom, R. M. Wolf, J. F. M. Cilessen and M. P. C. M. Krijn: Phys. Rev. Lett. 73 (1994) 2107.