The influences of plasma ion bombarded on crystallization, electrical and mechanical properties of Zn-In-Sn-O films

Applied Surface Science

Volumn 258, Issue 3, 2011, Pages 1157-1163

  Chen, K J ^a   Hung, F Y ^a   Chang, S J ^a   Liao, J D ^a   Weng, C C ^a   Hu, Z S ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Co sputtering; Plasma ions bombarded (PIB); Toughness; ZITO

Indexed keywords

ARGON; INDIUM COMPOUNDS; ION BOMBARDMENT; IONS; OPTOELECTRONIC DEVICES; OXYGEN VACANCIES; TOUGHNESS; ZINC COMPOUNDS;

AR PLASMAS; COSPUTTERING; ELECTRICAL AND MECHANICAL PROPERTIES; FILM CONDUCTIVITY; METAL ATOMS; PLASMA BOMBARDMENT; PLASMA IONS; ZITO;

TIN COMPOUNDS;

EID: 80455160250     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.09.056     Document Type: Article

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