Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells

IEEE Photonics Technology Letters

Volumn 22, Issue 5, 2010, Pages 338-340

  Kuo, Der Min ^a   Wang, Shui Jinn ^a   Uang, Kai Ming ^b   Chen, Tron Min ^b   Kuo, Hon Yi ^a   Lee, Wei Chi ^a   Wang, Pei Ren ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

GaN based; Light emitting diode (led); Nano; Ohmic contact; Polystyrene (ps); Power conversion; Reflectivity; Vertical

Indexed keywords

CURRENT SPREADING; ENHANCED PERFORMANCE; GAN-BASED; GAN-BASED LIGHT-EMITTING DIODES; HIGH REFLECTIVITY; INDIUM ZINC OXIDES; LIGHT OUTPUT; LIGHT-EMITTING DIODE (LED); LIGHT-EXTRACTION EFFICIENCY; POWER CONVERSION; POWER CONVERSION EFFICIENCIES;

CONVERSION EFFICIENCY; ELECTRIC CONTACTORS; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; OHMIC CONTACTS; PLATINUM; POLYSTYRENES; REFLECTION; WELLS; ZINC;

LIGHT EMITTING DIODES;

EID: 77955201397     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2039641     Document Type: Article

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