InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN

Applied Physics Letters

Volumn 97, Issue 17, 2010, Pages

  Mikulics, M ^a   Stoklas, R ^b   Dadgar, A ^c   Gregusova D ^b   Novak J ^b   Grutzmacher D ^a   Krost, A ^c   Kordos P ^b,d  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

^d SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; ENHANCEMENT MODES; GAN-BASED DEVICES; GATE LAG; HETEROSTRUCTURES; HIGH FREQUENCY HF; HIGH-POWER DEVICES; LATTICE-MATCHED; MOLE FRACTION; PEAK EXTRINSIC TRANSCONDUCTANCE; PULSE WIDTH; PULSED CURRENT-VOLTAGE MEASUREMENT; SATURATION DRAIN CURRENT; SHEET CHARGE DENSITY;

CRYSTALS; DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM NITRIDE;

FIELD EFFECT TRANSISTORS;

EID: 78149417696     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3507885     Document Type: Article

References (16)

1. H. Sun, A. R. Alt, H. Benedickter, E. Feltin, J. -F. Carlin, M. Gonschorek, N. R. Grandjean, and C. R. Bolognesi, IEEE Electron Device Lett. EDLEDZ 0741-3106 31, 957 (2010). 10.1109/LED.2010.2055826
2. N. Sarazin, E. Morvan, M. A. di Forte Poisson, M. Oualli, C. Gaquiere, O. Jardel, O. Drisse, M. Tordjman, M. Magis, and S. L. Delage, IEEE Electron Device Lett. EDLEDZ 0741-3106 31, 11 (2010). 10.1109/LED.2009.2035145
3. J. Kuzmik, IEEE Electron Device Lett. EDLEDZ 0741-3106 22, 510 (2001). 10.1109/55.962646 (Pubitemid 33106085)
4. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices IETDAI 0018-9383 48, 560 (2001). 10.1109/16.906451 (Pubitemid 32271174)
5. J. H. Leach, M. Wu, X. Ni, X. Li, Ü. Özgür, and H. Morko̧, Phys. Status Solidi A PSSABA 0031-8965 207, 211 (2010). 10.1002/pssa.200925362
6. R. Butté, J. -F. Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christman, D. Simeonov, A. Castiglia, J. Dorsaz, H. J. Buehlmann, S. Christopoulos, G. Baldassarri Höger von Högersthal, A. J. D. Grundy, M. Mosca, C. Pinquier, M. A. Py, F. Demangeot, J. Frandon, P. G. Lagoudakis, J. J. Baumberg, and N. Grandjean, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 40, 6328 (2007). 10.1088/0022-3727/40/20/S16 (Pubitemid 350093020)
7. W. Li and W. X. Ni, Appl. Phys. Lett. APPLAB 0003-6951 68, 2705 (1996). 10.1063/1.116315 (Pubitemid 126683875)
8. M. Azize and T. Palacios, J. Appl. Phys. JAPIAU 0021-8979 108, 023707 (2010). 10.1063/1.3463150
9. F. González-Posada Flores, C. Rivera, and E. Muos, Appl. Phys. Lett. APPLAB 0003-6951 95, 203504 (2009). 10.1063/1.3263955
10. D. Gregušová, J. Bernát, M. Držík, M. Marso, J. Novák, F. Uherek, and P. Kordoš, Phys. Status Solidi C ZZZZZZ 1610-1634 2, 2619 (2005). 10.1002/pssc.200461350 (Pubitemid 41524983)
11. W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. APPLAB 0003-6951 68, 970 (1996). 10.1063/1.116115 (Pubitemid 126684472)
12. E. Iliopoulos, A. Adikimenakis, C. Giesen, M. Heuken, and A. Georgakilas, Appl. Phys. Lett. APPLAB 0003-6951 92, 191907 (2008). 10.1063/1.2921783 (Pubitemid 351713425)
13. R. E. Jones, R. Broesler, K. M. Yu, J. W. Ager, E. E. Haller, W. Walukiewicz, X. Chen, and W. J. Schaff, J. Appl. Phys. JAPIAU 0021-8979 104, 123501 (2008). 10.1063/1.3039509
14. C. Hums, J. Bläsing, A. Dadgar, A. Diez, T. Hempel, J. Christen, A. Krost, K. Lorenz, and E. Alves, Appl. Phys. Lett. APPLAB 0003-6951 90, 022105 (2007). 10.1063/1.2424649 (Pubitemid 46105575)
15. T. Hashizume, private communication (September 9, 2010).
16. H. J. Kim, S. Choi, Z. Lochner, Y. -Ch. Lee, Y. Zhang, S. -Ch. Shen, J. -H. Ryou, and R. Dupuis, International Workshop on Nitride Semiconductors (IWN2010), Tampa, September 19-24, 2010, p. 242 (http://iwn2010.org/open.php? contents=program).