Room temperature coherent control of defect spin qubits in silicon carbide

Nature

Volumn 479, Issue 7371, 2011, Pages 84-87

  Koehl, William F ^a   Buckley, Bob B ^a   Heremans, F Joseph ^a   Calusine, Greg ^a   Awschalom, David D ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DIAMOND; SILICON; SILICON CARBIDE;

DIAMOND; INFORMATION AND COMMUNICATION TECHNOLOGY; MICROWAVE RADIATION; NITROGEN; QUANTUM MECHANICS; SILICON; TELECOMMUNICATION; WAVELENGTH;

ACCELERATION; ARTICLE; MICROTECHNOLOGY; MICROWAVE RADIATION; PHOTOLUMINESCENCE; PHOTON; PRIORITY JOURNAL; ROOM TEMPERATURE; TELECOMMUNICATION;

EID: 80455123734     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature10562     Document Type: Article

References (30)

1. Hanson, R. & Awschalom, D. D. Coherent manipulation of single spins in semiconductors. Nature 453, 1043-1049 (2008). (Pubitemid 351871747)
2. Awschalom, D. D. & Flatté, M. E. Challenges for semiconductor spintronics. Nature Phys. 3, 153-159 (2007).
3. Jelezko, F., Gaebel, T., Popa, I., Gruber, A. & Wrachtrup, J. Observation of coherent oscillations in a single electron spin. Phys. Rev. Lett. 92, 076401 (2004).
4. Weber, J. R. et al. Quantum computing with defects. Proc. Natl Acad. Sci. USA 107, 8513-8518 (2010).
5. Gali, A. Time-dependent density functional study on the excitation spectrum of point defects in semiconductors. Phys. Status Solidi B 248, 1337-1346 (2011).
6. Baranov,P. G. etal. EPR identification ofthe triplet ground state and photoinduced population inversion for aSi-C divacancyin silicon carbide. JETP Lett. 82,441-443 (2005). (Pubitemid 41754463)
7. Son, N. T. et al. Divacancy in 4H-SiC. Phys. Rev. Lett. 96, 055501 (2006).
8. Mizuochi, N. et al. Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S53/2 and C3v symmetry in n-type 4H-SiC. Phys. Rev. B 66, 235202 (2002).
9. Son, N. T., Zolnai, Z. & Janzén, E. Silicon vacancy related TV2a center in 4H-SiC. Phys. Rev. B 68, 205211 (2003).
10. Baranov, P. G., Bundakova, A. P. & Soltamov, A. A. Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy. Phys. Rev. B 83, 125203 (2011).
11. Saleh, B. E. A. & Teich, M. C. Fundamentals of Photonics Ch. 22 (Wiley, 1991).
12. Powell, A. et al. Growth of SiC substrates. Int. J. High Speed Electron. Syst. 16, 751-777 (2006). (Pubitemid 46825681)
13. Zetterling, C.-M. (ed.) Process Technology for Silicon Carbide Devices (Institution of Electrical Engineers, 2002).
14. O'Brien, J. L., Furusawa, A. & Vucković, J. Photonic quantum technologies. Nature Photon. 3, 687-695 (2009).
15. Maze, J. R. et al. Nanoscale magnetic sensing with an individual electronic spin in diamond. Nature 455, 644-647 (2008).
16. Balasubramanian,G.et al, Nanoscaleimaging magnetometry with diamond spins under ambient conditions. Nature, 455, 648-651, 2008.
17. Ladd, T. D. et al. Quantum computers. Nature 464, 45-53 (2010).
18. Saddow, S. E. & Agarwal, A. (eds) Advances in Silicon Carbide Processing and Applications (Artech House, 2004).
19. Ryu, S.-H., Kornegay,K.T., Cooper,J.A.& Melloch,M.R.Digital CMOS IC'sin6H-SiC operating on a 5-V power supply. IEEE Trans. Electron Dev. 45, 45-53 (1998). (Pubitemid 128743202)
20. Cheung, R. (ed.) Silicon Carbide Microelectromechanical Systems for Harsh Environments (Imperial College Press, 2004).
21. Liu, L. & Edgar, J. H. Substrates for gallium nitride epitaxy. Mater. Sci. Eng. R 37, 61-127 (2002).
22. Berger, C. et al. Electronic confinement and coherence in patterned epitaxial graphene. Science 312, 1191-1196 (2006). (Pubitemid 43801140)
23. Magnusson, B. & Janzén, E. Optical characterization of deep level defects in SiC. Mater. Sci. Forum 483-485, 341-346 (2005). (Pubitemid 47544453)
24. Carlos, W. E., Glaser, E. R. & Shanabrook, B. V. Optical and magnetic resonance signaturesofdeep levelsinsemi-insulating 4HSiC.Physica B 340-342, 151-155 (2003).
25. Carlos, W. E., Graces, N. Y., Glaser, E. R. & Fanton, M. A. Annealing of multivacancy defects in 4H-SiC. Phys. Rev. B 74, 235201 (2006).
26. Son, N. T. et al. Identification of divacancies in 4H-SiC. Physica B 376-377, 334-337 (2006).
27. Hanson, R., Gywat, O. & Awschalom, D. D. Room-temperature manipulation and decoherence of a single spin in diamond. Phys. Rev. B 74, 161203(R) (2006).
28. de Lange, G., Wang, Z. H., Ristè, D., Dobrovitski, V. V. & Hanson, R. Universal dynamical decoupling of a single solid-state spin from a spin bath. Science 330, 60-63 (2010).
29. Stanwix, P. L. et al. Coherence of nitrogen-vacancy electronic spin ensembles in diamond. Phys. Rev. B 82, 201201(R) (2010).
30. van Oort,E.& Glasbeek, M.Optically detected low field electron spin echo envelope modulations of fluorescent N-V centers in diamond. Chem. Phys., 143, 131-140, 1990).