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Volumn 376-377, Issue 1, 2006, Pages 334-337
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Identification of divacancies in 4H-SiC
e
Norstel AB
(Sweden)
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Author keywords
Ab initio calculations; Divacancies; Electron paramagnetic resonance
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Indexed keywords
GROUND STATE;
MOLECULAR DYNAMICS;
PARAMAGNETIC RESONANCE;
AB INITIO CALCULATIONS;
CARBON VACANCY-CARBON;
DIVACANCIES;
DOUBLE POSITIVE CHARGE STATE;
SILICON CARBIDE;
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EID: 33645221657
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2005.12.086 Document Type: Conference Paper |
Times cited : (6)
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References (16)
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