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Journal of Applied Physics

Volumn 110, Issue 7, 2011, Pages

Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate

(8) Yan, J a Yu, T J a Li, X B a Tao, Y B a Xu, C L a Long, H a Yang, Z Y a Zhang, G Y a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; BAND FILLING EFFECTS; BLUE LEDS; COEFFICIENT C; EXTERNAL QUANTUM EFFICIENCY; INJECTION CURRENTS; PATTERNED SAPPHIRE SUBSTRATE; RATE-EQUATION ANALYSIS; SAPPHIRE SUBSTRATES; STRUCTURE DEFECTS;

AUGERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE;

EFFICIENCY;

EID: 80054999781 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3642998 Document Type: Article

Times cited : (13)

References (19)

1
- 70350423917
- 10.1063/1.3254237
- X. J. Shao, H. Lu, D. J. Chen, Z. L. Xie, R. Zhong, and Y. D. Zheng, Appl. Phys. Lett. 95, 163504 (2009). 10.1063/1.3254237
- (2009) Appl. Phys. Lett. , vol.95 , pp. 163504
- Shao, X.J.¹ Lu, H.² Chen, D.J.³ Xie, Z.L.⁴ Zhong, R.⁵ Zheng, Y.D.⁶

2
- 35148864428
- Auger recombination in InGaN measured by photoluminescence
- DOI 10.1063/1.2785135
- Y. C. Shen, G. O. Mller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 91, 141101 (2007). 10.1063/1.2785135 (Pubitemid 47534188)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 141101
- Shen, Y.C.¹ Mueller, G.O.² Watanabe, S.³ Gardner, N.F.⁴ Munkholm, A.⁵ Krames, M.R.⁶

3
- 37149027248
- Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A cm2
- DOI 10.1063/1.2807272
- N. F. Gardner, G. O. Mller, Y. C. Shen, G. Chen, S. Watanabe, W. Gtz, and M. R. Krames, Appl. Phys. Lett. 91, 243506 (2007). 10.1063/1.2807272 (Pubitemid 350262046)
- (2007) Applied Physics Letters , vol.91 , Issue.24 , pp. 243506
- Gardner, N.F.¹ Muller, G.O.² Shen, Y.C.³ Chen, G.⁴ Watanabe, S.⁵ Gotz, W.⁶ Krames, M.R.⁷

4
- 35648977539
- Origin of efficiency droop in GaN-based light-emitting diodes
- DOI 10.1063/1.2800290
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 91, 183507 (2007). 10.1063/1.2800290 (Pubitemid 350037243)
- (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 183507
- Kim, M.-H.¹ Schubert, M.F.² Dai, Q.³ Kim, J.K.⁴ Schubert, E.F.⁵ Piprek, J.⁶ Park, Y.⁷

5
- 60349114909
- 10.1063/1.3081059
- K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 94, 061116 (2009). 10.1063/1.3081059
- (2009) Appl. Phys. Lett. , vol.94 , pp. 061116
- Vampola, K.J.¹ Iza, M.² Keller, S.³ Denbaars, S.P.⁴ Nakamura, S.⁵

6
- 77957660712
- 10.1063/1.3493654
- Q. Dai, Q. F. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M. H. Kim, and Y. J. Park, Appl. Phys. Lett. 97, 133507 (2010). 10.1063/1.3493654
- (2010) Appl. Phys. Lett. , vol.97 , pp. 133507
- Dai, Q.¹ Shan, Q.F.² Wang, J.³ Chhajed, S.⁴ Cho, J.⁵ Schubert, E.F.⁶ Crawford, M.H.⁷ Koleske, D.D.⁸ Kim, M.H.⁹ Park, Y.J.¹⁰

7
- 77953005980
- 10.1063/1.3374686
- Y. B. Tao, Z. Z. Chen, F. F. Zhang, C. Y. Jia, S. L. Qi, T. J. Yu, X. N. Kang, Z. J. Yang, L. P. You, D. P. Yu, and G. Y. Zhang, J. Appl. Phys. 107, 103529 (2010). 10.1063/1.3374686
- (2010) J. Appl. Phys. , vol.107 , pp. 103529
- Tao, Y.B.¹ Chen, Z.Z.² Zhang, F.F.³ Jia, C.Y.⁴ Qi, S.L.⁵ Yu, T.J.⁶ Kang, X.N.⁷ Yang, Z.J.⁸ You, L.P.⁹ Yu, D.P.¹⁰ Zhang, G.Y.¹¹

8
- 33750179081
- Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template
- DOI 10.1063/1.2363148
- D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, Appl. Phys. Lett. 89, 161105 (2006). 10.1063/1.2363148 (Pubitemid 44601640)
- (2006) Applied Physics Letters , vol.89 , Issue.16 , pp. 161105
- Wuu, D.S.¹ Wang, W.K.² Wen, K.S.³ Huang, S.C.⁴ Lin, S.H.⁵ Huang, S.Y.⁶ Lin, C.F.⁷ Horng, R.H.⁸

9
- 0033871230
- 10.1007/s11664-000-0159-4
- Z. Q. Fang, D. C. Reynolds, and D. C. Look, J. Electron. Mater. 29, 448 (2000). 10.1007/s11664-000-0159-4
- (2000) J. Electron. Mater. , vol.29 , pp. 448
- Fang, Z.Q.¹ Reynolds, D.C.² Look, D.C.³

10
- 2942653090
- 10.1063/1.1756683
- X. A. Cao, S. F. LeBoeuf, M. P. D'Evelyn, S. D. Arthur, J. Kretchmer, C. H. Yan, and Z. H. Yang, Appl. Phys. Lett. 84, 4313 (2001). 10.1063/1.1756683
- (2001) Appl. Phys. Lett. , vol.84 , pp. 4313
- Cao, X.A.¹ Leboeuf, S.F.² D'Evelyn, M.P.³ Arthur, S.D.⁴ Kretchmer, J.⁵ Yan, C.H.⁶ Yang, Z.H.⁷

11
- 43049105414
- Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes
- DOI 10.1088/0022-3727/41/3/035107, PII S0022372708619828
- J. Z. Hu, L. Q. Yang, and M. W. Shin, J. Phys. D 41, 035107 (2008). 10.1088/0022-3727/41/3/035107 (Pubitemid 351622872)
- (2008) Journal of Physics D: Applied Physics , vol.41 , Issue.3 , pp. 035107
- Hu, J.¹ Yang, L.² Shin, M.W.³

12
- 0006009502
- Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes
- DOI 10.1063/1.1413721
- O. Pursiainen, N. Linder, A. Jaeger, R. Oberschmid, and K. Streubel, Appl. Phys. Lett. 79, 2895 (2001). 10.1063/1.1413721 (Pubitemid 33608091)
- (2001) Applied Physics Letters , vol.79 , Issue.18 , pp. 2895-2897
- Pursiainen, O.¹ Linder, N.² Jaeger, A.³ Oberschmid, R.⁴ Streubel, K.⁵

13
- 58149474523
- 10.1088/0268-1242/23/12/125022
- Y. J. Sun, T. J. Yu, Z. Z. Chen, X. N. Kang, S. L. Qi, M. G. Li, G. J. Lian, S. Huang, R. S. Xie, and G. Y. Zhang, Semicond. Sci. Technol. 23, 125022 (2008). 10.1088/0268-1242/23/12/125022
- (2008) Semicond. Sci. Technol. , vol.23 , pp. 125022
- Sun, Y.J.¹ Yu, T.J.² Chen, Z.Z.³ Kang, X.N.⁴ Qi, S.L.⁵ Li, M.G.⁶ Lian, G.J.⁷ Huang, S.⁸ Xie, R.S.⁹ Zhang, G.Y.¹⁰

14
- 70350397023
- 10.1063/1.3254232
- J. Y. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu, and Q. M. Wang, Appl. Phys. Lett. 95, 161110 (2009). 10.1063/1.3254232
- (2009) Appl. Phys. Lett. , vol.95 , pp. 161110
- Zhang, J.Y.¹ Cai, L.E.² Zhang, B.P.³ Hu, X.L.⁴ Jiang, F.⁵ Yu, J.Z.⁶ Wang, Q.M.⁷

15
- 0000900177
- Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells
- DOI 10.1063/1.122810, PII S0003695198034500
- T. Wang, D. Nakagawa, J. Wang, T. Sugahara, and S. Sakai, Appl. Phys. Lett. 73, 3571 (1998). 10.1063/1.122810 (Pubitemid 128677468)
- (1998) Applied Physics Letters , vol.73 , Issue.24 , pp. 3571-3573
- Wang, T.¹ Nakagawa, D.² Wang, J.³ Sugahara, T.⁴ Sakai, S.⁵

16
- 78650723632
- 10.1063/1.3531957
- S. P. Chang, C. H. Wang, C. H. Chiu, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, Appl. Phys. Lett. 97, 251114 (2010). 10.1063/1.3531957
- (2010) Appl. Phys. Lett. , vol.97 , pp. 251114
- Chang, S.P.¹ Wang, C.H.² Chiu, C.H.³ Li, J.C.⁴ Lu, Y.S.⁵ Li, Z.Y.⁶ Yang, H.C.⁷ Kuo, H.C.⁸ Lu, T.C.⁹ Wang, S.C.¹⁰

17
- 77949745836
- 10.1063/1.3330870
- A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010). 10.1063/1.3330870
- (2010) Appl. Phys. Lett. , vol.96 , pp. 103504
- David, A.¹ Grundmann, M.J.²

18
- 69549108530
- 10.1063/1.3216578
- H.-Y. Ryu, H.-S. Kim, and J.-I. Shim, Appl. Phys. Lett. 95, 081114 (2009). 10.1063/1.3216578
- (2009) Appl. Phys. Lett. , vol.95 , pp. 081114
- Ryu, H.-Y.¹ Kim, H.-S.² Shim, J.-I.³

19
- 67049171363
- 10.1063/1.3133359
- K. T. Delaney, P. Rinke, and C. G. Van de Walle, Appl. Phys. Lett. 94, 191109 (2009). 10.1063/1.3133359
- (2009) Appl. Phys. Lett. , vol.94 , pp. 191109
- Delaney, K.T.¹ Rinke, P.² Van De Walle, C.G.³

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