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Volumn 95, Issue 16, 2009, Pages

Efficient hole transport in asymmetric coupled InGaN multiple quantum wells

(7) Zhang, Jiang Yong a,b Cai, Li E b Zhang, Bao Ping b Hu, Xiao Long b Jiang, Fang b Yu, Jin Zhong a,b Wang, Qi Ming a,b

a INSTITUTE OF SEMICONDUCTORS (China)

b XIAMEN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ACTIVE STRUCTURES; ASYMMETRIC COUPLED QUANTUM WELLS; COUPLED QUANTUM WELL; FORWARD VOLTAGE; HOLE TRANSPORTS; HOLE TUNNELING; LIGHT EMISSION INTENSITY; LIGHT EMITTING DEVICES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLE QUANTUM WELLS; STRUCTURE ANALYSIS; UNIFORM DISTRIBUTION;

LIGHT; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; QUANTUM CHEMISTRY; STRUCTURAL METALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 70350397023 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3254232 Document Type: Article

Times cited : (58)

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