SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 95, Issue 16, 2009, Pages

Efficiency droop behavior of direct current aged GaN-based blue light-emitting diodes

(6) Shao, Xianjie a Lu, Hai a Chen, Dunjun a Xie, Zili a Zhang, Rong a Zheng, Youdou a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BLUE LIGHT-EMITTING; DIRECT CURRENT; ELECTROLUMINESCENCE SPECTRA; INGAN/GAN; INJECTION CURRENTS; LUMINESCENCE DECAYS; MULTIPLE QUANTUM WELLS; NON-RADIATIVE RECOMBINATIONS; NONRADIATIVE RECOMBINATION CENTERS; PEAK POSITION; RATE-EQUATION MODELS;

CURRENT DENSITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 70350423917 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3254237 Document Type: Article

Times cited : (26)

References (15)

1
- 0029346154
- 0021-4922,. 10.1143/JJAP.34.L797
- S. Nakamura, S. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys., Part 2 0021-4922 34, L797 (1995). 10.1143/JJAP.34.L797
- (1995) Jpn. J. Appl. Phys., Part 2 , vol.34 , pp. 797
- Nakamura, S.¹ Senoh, S.² Iwasa, N.³ Nagahama, S.⁴

2
- 35648977539
- Origin of efficiency droop in GaN-based light-emitting diodes
- DOI 10.1063/1.2800290
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 0003-6951 91, 183507 (2007). 10.1063/1.2800290 (Pubitemid 350037243)
- (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 183507
- Kim, M.-H.¹ Schubert, M.F.² Dai, Q.³ Kim, J.K.⁴ Schubert, E.F.⁵ Piprek, J.⁶ Park, Y.⁷

3
- 59349115181
- 0003-6951,. 10.1063/1.3077017
- Y. Yang, X. A. Cao, and C. H. Yan, Appl. Phys. Lett. 0003-6951 94, 041117 (2009). 10.1063/1.3077017
- (2009) Appl. Phys. Lett. , vol.94 , pp. 041117
- Yang, Y.¹ Cao, X.A.² Yan, C.H.³

4
- 42549112950
- Electroluminescence efficiency of (1 0 1 0)-oriented InGaN-based light-emitting diodes at low temperature
- DOI 10.1088/0022-3727/41/8/082001, PII S0022372708729061
- H. Masui, H. Kroemer, M. C. Schmidt, K. C. Kim, N. N. Fellows, S. Nakamura, and S. P. DenBaars, J. Phys. D: Appl. Phys. 0022-3727 41, 082001 (2008). 10.1088/0022-3727/41/8/082001 (Pubitemid 351590984)
- (2008) Journal of Physics D: Applied Physics , vol.41 , Issue.8 , pp. 082001
- Masui, H.¹ Kroemer, H.² Schmidt, M.C.³ Kim, K.-C.⁴ Fellows, N.N.⁵ Nakamura, S.⁶ DenBaars, S.P.⁷

5
- 35148864428
- Auger recombination in InGaN measured by photoluminescence
- DOI 10.1063/1.2785135
- Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 0003-6951 91, 141101 (2007). 10.1063/1.2785135 (Pubitemid 47534188)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 141101
- Shen, Y.C.¹ Mueller, G.O.² Watanabe, S.³ Gardner, N.F.⁴ Munkholm, A.⁵ Krames, M.R.⁶

6
- 63049115303
- 10.1109/TDMR.2008.921527
- M. Meneghini and G. Meneghesso, IEEE Trans. Device Mater. Reliab. 8, 323 (2008). 10.1109/TDMR.2008.921527
- (2008) IEEE Trans. Device Mater. Reliab. , vol.8 , pp. 323
- Meneghini, M.¹ Meneghesso, G.²

7
- 0033871230
- 0361-5235,. 10.1007/s11664-000-0159-4
- Z. Q. Fang, D. C. Reynolds, and D. C. Look, J. Electron. Mater. 0361-5235 29, 448 (2000). 10.1007/s11664-000-0159-4
- (2000) J. Electron. Mater. , vol.29 , pp. 448
- Fang, Z.Q.¹ Reynolds, D.C.² Look, D.C.³

8
- 0000075750
- 0021-8979,. 10.1063/1.366450
- T. Egawa, T. Jimbo, and M. Umeno, J. Appl. Phys. 0021-8979 82, 5816 (1997). 10.1063/1.366450
- (1997) J. Appl. Phys. , vol.82 , pp. 5816
- Egawa, T.¹ Jimbo, T.² Umeno, M.³

9
- 0000100475
- Electrical characterization of GaN p-n junctions with and without threading dislocations
- DOI 10.1063/1.122057, PII S0003695198015332
- P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 0003-6951 73, 975 (1998). 10.1063/1.122057 (Pubitemid 128671730)
- (1998) Applied Physics Letters , vol.73 , Issue.7 , pp. 975-977
- Kozodoy, P.¹ Ibbetson, J.P.² Marchand, H.³ Fini, P.T.⁴ Keller, S.⁵ Speck, J.S.⁶ Denbaars, S.P.⁷ Mishra, U.K.⁸

10
- 0001244452
- Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes
- DOI 10.1063/1.116351, PII S0003695196030203
- H. C. Casey, Jr., J. Muth, S. Krishnankutty, and J. M. Zavada, Appl. Phys. Lett. 0003-6951 68, 2867 (1996). 10.1063/1.116351 (Pubitemid 126684063)
- (1996) Applied Physics Letters , vol.68 , Issue.20 , pp. 2867-2869
- Casey Jr., H.C.¹ Muth, J.² Krishnankutty, S.³ Zavada, J.M.⁴

11
- 1542470314
- 0003-6951,. 10.1063/1.1647273
- K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 0003-6951 84, 1046 (2004). 10.1063/1.1647273
- (2004) Appl. Phys. Lett. , vol.84 , pp. 1046
- Mayes, K.¹ Yasan, A.² McClintock, R.³ Shiell, D.⁴ Darvish, S.R.⁵ Kung, P.⁶ Razeghi, M.⁷

12
- 13844254127
- Dislocation related issues in the degradation of GaN-based laser diodes
- DOI 10.1109/JSTQE.2004.837735
- S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, IEEE J. Sel. Top. Quantum Electron. 1077-260X 10, 1277 (2004). 10.1109/JSTQE.2004.837735 (Pubitemid 40245922)
- (2004) IEEE Journal on Selected Topics in Quantum Electronics , vol.10 , Issue.6 , pp. 1277-1286
- Tomiya, S.¹ Hino, T.² Goto, S.³ Takeya, M.⁴ Ikeda, M.⁵

13
- 36849016286
- Effect of dislocation density on efficiency droop in GaInNGaN light-emitting diodes
- DOI 10.1063/1.2822442
- M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, Appl. Phys. Lett. 0003-6951 91, 231114 (2007). 10.1063/1.2822442 (Pubitemid 350234416)
- (2007) Applied Physics Letters , vol.91 , Issue.23 , pp. 231114
- Schubert, M.F.¹ Chhajed, S.² Kim, J.K.³ Schubert, E.F.⁴ Koleske, D.D.⁵ Crawford, M.H.⁶ Lee, S.R.⁷ Fischer, A.J.⁸ Thaler, G.⁹ Banas, M.A.¹⁰

14
- 56349141665
- 0021-8979,. 10.1063/1.3009967
- X. A. Cao, Y. Yang, and H. Guo, J. Appl. Phys. 0021-8979 104, 093108 (2008). 10.1063/1.3009967
- (2008) J. Appl. Phys. , vol.104 , pp. 093108
- Cao, X.A.¹ Yang, Y.² Guo, H.³

15
- 34547203655
- Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs
- DOI 10.1002/pssa.200674112
- M. Baeumler, M. Kunzer, R. Schmidt, S. Liu, W. Pletschen, P. Schlotter, K. Köhler, U. Kaufmann, and J. Wagner, Phys. Status Solidi A 0031-8965 204, 1018 (2007). 10.1002/pssa.200674112 (Pubitemid 47120047)
- (2007) Physica Status Solidi (A) Applications and Materials , vol.204 , Issue.4 , pp. 1018-1024
- Baeumler, M.¹ Kunzer, M.² Schmidt, R.³ Liu, S.⁴ Pletschen, W.⁵ Schlotter, P.⁶ Kohler, K.⁷ Kaufmann, U.⁸ Wagner, J.⁹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.