SCOPUS 정보 검색 플랫폼

Volumn 107, Issue 10, 2010, Pages

Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

(11) Tao, Y B a Chen, Z Z a Zhang, F F a Jia, C Y a Qi, S L a Yu, T J a Kang, X N a Yang, Z J a You, L P a Yu, D P a Zhang, G Y a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; DRIVE CURRENTS; EMISSION WAVELENGTH; GAN LAYERS; HIGH CURRENTS; INGAN/GAN; INGAN/GAN QUANTUM WELL; LIGHT OUTPUT POWER; LOW TEMPERATURES; METAL-ORGANIC VAPOR PHASE EPITAXY; MULTIPLE QUANTUM WELLS; PEAK EFFICIENCY; PIEZO-ELECTRIC FIELDS;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC LIGHT EMITTING DIODES (OLED); POLARIZATION; SCANNING ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77953005980 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3374686 Document Type: Article

Times cited : (17)

References (18)

1
- 54849437149
- PSSABA 0031-8965, 10.1002/pssa.200778747
- G. Chen, M. Craven, A. Kim, A. Munkholm, S. Watanabe, M. Camras, W. Götz, and F. Steranka, Phys. Status Solidi A PSSABA 0031-8965 205, 1086 (2008). 10.1002/pssa.200778747
- (2008) Phys. Status Solidi A , vol.205 , pp. 1086
- Chen, G.¹ Craven, M.² Kim, A.³ Munkholm, A.⁴ Watanabe, S.⁵ Camras, M.⁶ Götz, W.⁷ Steranka, F.⁸

2
- 35648977539
- Origin of efficiency droop in GaN-based light-emitting diodes
- DOI 10.1063/1.2800290
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. APPLAB 0003-6951 91, 183507 (2007). 10.1063/1.2800290 (Pubitemid 350037243)
- (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 183507
- Kim, M.-H.¹ Schubert, M.F.² Dai, Q.³ Kim, J.K.⁴ Schubert, E.F.⁵ Piprek, J.⁶ Park, Y.⁷

3
- 79956060178
- Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
- DOI 10.1063/1.1433164
- E. Kuokstis, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska, and M. S. Shur, Appl. Phys. Lett. APPLAB 0003-6951 80, 977 (2002). 10.1063/1.1433164 (Pubitemid 34168032)
- (2002) Applied Physics Letters , vol.80 , Issue.6 , pp. 977
- Kuokstis, E.¹ Yang, J.W.² Simin, G.³ Asif Khan, M.⁴ Gaska, R.⁵ Shur, M.S.⁶

4
- 60349114909
- APPLAB 0003-6951, 10.1063/1.3081059
- K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. APPLAB 0003-6951 94, 061116 (2009). 10.1063/1.3081059
- (2009) Appl. Phys. Lett. , vol.94 , pp. 061116
- Vampola, K.J.¹ Iza, M.² Keller, S.³ Denbaars, S.P.⁴ Nakamura, S.⁵

5
- 35148864428
- Auger recombination in InGaN measured by photoluminescence
- DOI 10.1063/1.2785135
- Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. APPLAB 0003-6951 91, 141101 (2007). 10.1063/1.2785135 (Pubitemid 47534188)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 141101
- Shen, Y.C.¹ Mueller, G.O.² Watanabe, S.³ Gardner, N.F.⁴ Munkholm, A.⁵ Krames, M.R.⁶

6
- 37149027248
- Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A cm2
- DOI 10.1063/1.2807272
- N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, Appl. Phys. Lett. APPLAB 0003-6951 91, 243506 (2007). 10.1063/1.2807272 (Pubitemid 350262046)
- (2007) Applied Physics Letters , vol.91 , Issue.24 , pp. 243506
- Gardner, N.F.¹ Muller, G.O.² Shen, Y.C.³ Chen, G.⁴ Watanabe, S.⁵ Gotz, W.⁶ Krames, M.R.⁷

7
- 33646501923
- Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
- DOI 10.1134/S1063782606050162
- A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Larinovich, Yu. T. Rebane, D. V. Tarkhin, and Yu. G. Shreter, Semiconductors SMICES 1063-7826 40, 605 (2006). 10.1134/S1063782606050162 (Pubitemid 43706897)
- (2006) Semiconductors , vol.40 , Issue.5 , pp. 605-610
- Efremov, A.A.¹ Bochkareva, N.I.² Gorbunov, R.I.³ Lavrinovich, D.A.⁴ Rebane, Yu.T.⁵ Tarkhin, D.V.⁶ Shreter, Yu.G.⁷

8
- 18044400175
- Performance of high-power AlInGaN light emitting diodes
- DOI 10.1002/1521-396X(200111)188:1<15::AID-PSSA15>3.0.CO;2-5
- A. Y. Kim, W. Götz, D. A. Steigerwald, J. J. Wierer, N. F. Gardner, J. Sun, S. A. Stockman, P. S. Martin, M. R. Krames, R. S. Kern, and F. M. Steranka, Phys. Status Solidi A PSSABA 0031-8965 188, 15 (2001). 10.1002/1521-396X(200111)188:1<15::AID-PSSA15>3.0.CO;2-5 (Pubitemid 33700864)
- (2001) Physica Status Solidi (A) Applied Research , vol.188 , Issue.1 , pp. 15-21
- Kim, A.Y.¹ Gotz, W.² Steigerwald, D.A.³ Wierer, J.J.⁴ Gardner, N.F.⁵ Sun, J.⁶ Stockman, S.A.⁷ Martin, P.S.⁸ Krames, M.R.⁹ Kern, R.S.¹⁰ Steranka, F.M.¹¹

9
- 0035519480
- Optical and structural studies in InGaN quantum well structure laser diodes
- DOI 10.1116/1.1418404, 45th International COnference on Electron, Ion, and Photon Beam Technology and Nanofabrication
- S. F. Chichibu, T. Azuhata, M. Sugiyama, T. Kitamura, Y. Ishida, H. Okumurac, H. Nakanishi, T. Sota, and T. Mukai, J. Vac. Sci. Technol. B JVTBD9 1071-1023 19, 2177 (2001). 10.1116/1.1418404 (Pubitemid 34089717)
- (2001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.19 , Issue.6 , pp. 2177-2183
- Chichibu, S.F.¹ Azuhata, T.² Sugiyama, M.³ Kitamura, T.⁴ Ishida, Y.⁵ Okumura, H.⁶ Nakanishi, H.⁷ Sota, T.⁸ Mukai, T.⁹

10
- 49149091530
- APPLAB 0003-6951, 10.1063/1.2963029
- M. F. Schubert, J. R. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. J. Park, Appl. Phys. Lett. APPLAB 0003-6951 93, 041102 (2008). 10.1063/1.2963029
- (2008) Appl. Phys. Lett. , vol.93 , pp. 041102
- Schubert, M.F.¹ Xu, J.R.² Kim, J.K.³ Schubert, E.F.⁴ Kim, M.H.⁵ Yoon, S.⁶ Lee, S.M.⁷ Sone, C.⁸ Sakong, T.⁹ Park, Y.J.¹⁰

11
- 58149492901
- APPLAB 0003-6951, 10.1063/1.3058687
- J. R. Xu, M. F. Schubert, A. N. Noemaun, D. Zhu, J. K. Kim, E. F. Schubert, M. H. Kim, H. J. Chung, S. Yoon, C. Sone, and Y. J. Park, Appl. Phys. Lett. APPLAB 0003-6951 94, 011113 (2009). 10.1063/1.3058687
- (2009) Appl. Phys. Lett. , vol.94 , pp. 011113
- Xu, J.R.¹ Schubert, M.F.² Noemaun, A.N.³ Zhu, D.⁴ Kim, J.K.⁵ Schubert, E.F.⁶ Kim, M.H.⁷ Chung, H.J.⁸ Yoon, S.⁹ Sone, C.¹⁰ Park, Y.J.¹¹

12
- 70349684801
- APPLAB 0003-6951, 10.1063/1.3236538
- X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, H. Morko̧, T. Paskova, G. Mulholland, and K. R. Evans, Appl. Phys. Lett. APPLAB 0003-6951 95, 121107 (2009). 10.1063/1.3236538
- (2009) Appl. Phys. Lett. , vol.95 , pp. 121107
- Li, X.¹ Ni, X.² Lee, J.³ Wu, M.⁴ Özgür, Ü.⁵ Morko̧, H.⁶ Paskova, T.⁷ Mulholland, G.⁸ Evans, K.R.⁹

13
- 0036671082
- GaN-InGaN quantum well and LED structures grown in a close coupled showerhead (CCS) MOCVD reactor
- DOI 10.1002/1521-396X(200208)192:2<354::AID-PSSA354>3.0.CO;2-I
- E. J. Thrush, M. J. Kappers, P. Dawson, D. Graham, J. S. Barnard, M. E. Vickers, L. Considine, J. T. Mullins, and C. J. Humphreys, Phys. Status Solidi A PSSABA 0031-8965, 192, 354 (2002). 10.1002/1521-396X(200208)192:2<354::AID- PSSA354>3.0.CO;2-I (Pubitemid 34993238)
- (2002) Physica Status Solidi (A) Applied Research , vol.192 , Issue.2 , pp. 354-359
- Thrush, E.J.¹ Kappers, M.J.² Dawson, P.³ Graham, D.⁴ Barnard, J.S.⁵ Vickers, M.E.⁶ Considine, L.⁷ Mullins, J.T.⁸ Humphreys, C.J.⁹

14
- 58149465739
- SSTEET 0268-1242, 10.1088/0268-1242/23/12/125039
- S. J. Leem, Y. C. Shin, E. H. Kim, C. M. Kim, B. G. Lee, Y. b. Moon, I. H. Lee, and T. G. Kim, Semicond. Sci. Technol. SSTEET 0268-1242 23, 125039 (2008). 10.1088/0268-1242/23/12/125039
- (2008) Semicond. Sci. Technol. , vol.23 , pp. 125039
- Leem, S.J.¹ Shin, Y.C.² Kim, E.H.³ Kim, C.M.⁴ Lee, B.G.⁵ Moon, Y.B.⁶ Lee, I.H.⁷ Kim, T.G.⁸

15
- 34548394562
- InGaN/GaN quantum wells with low growth temperature GaN cap layers
- DOI 10.1016/j.jcrysgro.2007.07.018, PII S0022024807006641
- S. T. Pendlebury, P. J. Parbrook, D. J. Mowbray, D. A. Wood, and K. B. Lee, J. Cryst. Growth JCRGAE 0022-0248 307, 363 (2007). 10.1016/j.jcrysgro.2007. 07.018 (Pubitemid 47368336)
- (2007) Journal of Crystal Growth , vol.307 , Issue.2 , pp. 363-366
- Pendlebury, S.T.¹ Parbrook, P.J.² Mowbray, D.J.³ Wood, D.A.⁴ Lee, K.B.⁵

16
- 79956057643
- Influence of the quantum-well shape on the light emission characteristics of InGaN/GaN quantum-well structures and light-emitting diodes
- DOI 10.1063/1.1519725
- H. W. Shim, R. J. Choi, S. M. Jeong, L. V. Vinh, C. -H. Hong, E. -K. Suh, and H. J. Lee, Appl. Phys. Lett. APPLAB 0003-6951 81, 3552 (2002). 10.1063/1.1519725 (Pubitemid 35427948)
- (2002) Applied Physics Letters , vol.81 , Issue.19 , pp. 3552
- Shim, H.W.¹ Choi, R.J.² Jeong, S.M.³ Van Vinh, L.⁴ Hong, C.-H.⁵ Suh, E.-K.⁶ Lee, H.J.⁷ Kim, Y.-W.⁸ Hwang, Y.G.⁹

17
- 4043128035
- JAPIAU 0021-8979, 10.1063/1.1766407
- M. C. Johnson, E. D. Bourret-Courchesne, J. Wu, Z. Liliental-Weber, D. N. Zakharov, R. J. Jorgenson, T. B. Ng, D. E. McCready, and J. R. Williams, J. Appl. Phys. JAPIAU 0021-8979 96, 1381 (2004). 10.1063/1.1766407
- (2004) J. Appl. Phys. , vol.96 , pp. 1381
- Johnson, M.C.¹ Bourret-Courchesne, E.D.² Wu, J.³ Liliental-Weber, Z.⁴ Zakharov, D.N.⁵ Jorgenson, R.J.⁶ Ng, T.B.⁷ McCready, D.E.⁸ Williams, J.R.⁹

18
- 69549108530
- APPLAB 0003-6951, 10.1063/1.3216578
- H. Y. Ryu, H. S. Kim, and J. I. Shim, Appl. Phys. Lett. APPLAB 0003-6951 95, 081114 (2009). 10.1063/1.3216578
- (2009) Appl. Phys. Lett. , vol.95 , pp. 081114
- Ryu, H.Y.¹ Kim, H.S.² Shim, J.I.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.