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Volumn 97, Issue 25, 2010, Pages

Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n -GaN layer

(10) Chang, S P a,b Wang, C H a Chiu, C H a Li, J C a Lu, Y S a Li, Z Y a Yang, H C b Kuo, H C a Lu, T C a Wang, S C a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b EPISTAR CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; GAN LAYERS; INGAN/GAN; INJECTION CURRENTS; INSERTION LAYERS; LOW TEMPERATURES; MAXIMUM VALUES; MULTIPLE QUANTUM WELLS; POLARIZATION FIELD; SHORT-PERIOD SUPERLATTICES; TUNNELING LEAKAGE; V-SHAPE;

DEFECT DENSITY; DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); POLARIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78650723632 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3531957 Document Type: Article

Times cited : (36)

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