Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current-voltage and admittance-voltage characteristics

Vacuum

Volumn 84, Issue 3, 2009, Pages 363-368

  Altindal, Ş ^a   Yücedaǧ, I ^b   Tataroglu A ^a  

^a GAZI UNIVERSITY   (Turkey)

^b DUZCE UNIVERSITY   (Turkey)

Author keywords

Frequency dependence; Insulator layer; MS diodes; Relaxation time; Surface states

Indexed keywords

BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; CONDUCTANCE-FREQUENCY; CURRENT VOLTAGE; ENERGY DISTRIBUTIONS; ENERGY RANGES; FORWARD BIAS; FREQUENCY DEPENDENCE; FREQUENCY RANGES; I-V BEHAVIOR; IDEALITY FACTORS; INSULATOR LAYER; INTERFACIAL INSULATOR LAYER; IV CHARACTERISTICS; LINEAR REGION; LOW FREQUENCY; METAL SEMICONDUCTOR INTERFACE; MS DIODES; REVERSE BIAS; ROOM TEMPERATURE; SATURATION CURRENT; SCHOTTKY DIODES; SERIES RESISTANCES; SI SCHOTTKY DIODE; SURFACE STATE; SURFACE STATES; VOLTAGE CHARACTERISTICS; ZERO-BIAS;

RELAXATION PROCESSES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SURFACE RELAXATION; SURFACE RESISTANCE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70350568909     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.07.003     Document Type: Article

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