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Volumn 10, Issue 1, 2010, Pages 337-341
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Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode
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Author keywords
Barrier height; Ideality factor; Organic inorganic semiconductor contact; Schottky diode
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Indexed keywords
BARRIER HEIGHT;
BARRIER HEIGHTS;
CONTACT PARAMETERS;
CU COMPLEXES;
ENERGY DISTRIBUTIONS;
HIGH SERIES RESISTANCES;
IDEAL DIODES;
IDEALITY FACTOR;
IDEALITY FACTORS;
INTERFACE STATE DENSITY;
INTERFACIAL LAYER;
IV CHARACTERISTICS;
N-SI WAFERS;
ORGANIC-INORGANIC SEMICONDUCTOR CONTACT;
ORGANIC/INORGANIC INTERFACES;
SCHOTTKY DIODE;
SCHOTTKY DIODES;
SEMICONDUCTOR BAND GAP;
COPPER;
CURRENT VOLTAGE CHARACTERISTICS;
DIODES;
DISTILLATION;
ELECTRIC POTENTIAL;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING ORGANIC COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DIODES;
SILICON WAFERS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 69249221323
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2009.06.019 Document Type: Article |
Times cited : (39)
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References (35)
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