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Volumn 10, Issue 1, 2010, Pages 337-341

Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode

Author keywords

Barrier height; Ideality factor; Organic inorganic semiconductor contact; Schottky diode

Indexed keywords

BARRIER HEIGHT; BARRIER HEIGHTS; CONTACT PARAMETERS; CU COMPLEXES; ENERGY DISTRIBUTIONS; HIGH SERIES RESISTANCES; IDEAL DIODES; IDEALITY FACTOR; IDEALITY FACTORS; INTERFACE STATE DENSITY; INTERFACIAL LAYER; IV CHARACTERISTICS; N-SI WAFERS; ORGANIC-INORGANIC SEMICONDUCTOR CONTACT; ORGANIC/INORGANIC INTERFACES; SCHOTTKY DIODE; SCHOTTKY DIODES; SEMICONDUCTOR BAND GAP;

EID: 69249221323     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.06.019     Document Type: Article
Times cited : (39)

References (35)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.