Nonlinear spectroscopic markers of structural change during charge accumulation in organic field-effect transistors

Journal of Physical Chemistry C

Volumn 115, Issue 41, 2011, Pages 20258-20266

  Anglin, Timothy C ^a   Sohrabpour, Zahra ^a   Massari, Aaron M ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBANCES; AMBIPOLAR DEVICES; CHARGE ACCUMULATION; ELECTRICAL BEHAVIORS; ELECTRICAL MEASUREMENT; FTIR; GATE BIAS; INTENSITY CHANGE; INTERFACIAL MOLECULES; NONLINEAR SPECTROSCOPY; ORGANIC SEMICONDUCTOR; POLY(TRIARYLAMINE); SELECTED EXAMPLES; SOURCE-DRAIN CURRENT; SPECTRAL RANGE; SPECTRAL SIGNATURE; STRUCTURAL CHANGE; STRUCTURAL PERTURBATION; SURFACE FUNCTIONALIZATION; VIBRATIONAL SUM-FREQUENCY GENERATIONS;

ELECTRIC FIELDS; NONLINEAR FEEDBACK; POLYMER FILMS; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 80054752873     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp206523j     Document Type: Article

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