Studying transient carrier behaviors in pentacene field effect transistors using visualized electric field migration

Journal of Physical Chemistry C

Volumn 113, Issue 23, 2009, Pages 10279-10284

  Manaka, Takaaki ^a   Liu, Fei ^b   Weis, Martin ^a   Iwamoto, Mitsumasa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AG ELECTRODE; AU ELECTRODES; CARRIER ACCUMULATION; CHANNEL REGION; COUPLED DIFFUSION; ELECTRIC FIELD DISTRIBUTIONS; ELECTRIC FIELD PROFILES; EXPERIMENTAL OBSERVATION; METAL ELECTRODES; NUMERICAL SIMULATION; OPTICAL SECOND HARMONIC GENERATION; PENTACENE FET; PENTACENE FIELD EFFECT TRANSISTORS; SHG SIGNALS; SIMPLE MODEL; SQUARE ROOTS; TIME EVOLUTIONS; TIME-RESOLVED;

CARRIER MOBILITY; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; ELECTRODES; ELECTRON MULTIPLIERS; HARMONIC GENERATION; MESFET DEVICES; MOSFET DEVICES; NONLINEAR OPTICS; POISSON EQUATION; SEMICONDUCTING ORGANIC COMPOUNDS; SILVER;

FIELD EFFECT TRANSISTORS;

EID: 67649961806     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp900779d     Document Type: Article

References (24)

1. Yasuda, T.; Goto, T.; Fujita, K.; Tsutsui, T. J. Appl. Phys. Lett. 2004, 85, 2098.
2. Chua, L. L.; Zaumseil, J.; Chang, J. F.; Ou, E. C. W.; Ho, P. K. H.; Sirringhaus, H.; Friend, R. H. Nature 2005, 434, 194.
3. Zaumseil, J.; Friend, R. H.; Sirringhaus, H. Nat. Mater. 2006, 5, 69.
4. Sze S. M. Physics of semiconducting devices, 2nd ed.; Wiley: New York, 1981.
5. Knipp, D.; Street, R. A.; Volkel, A. R. J. Appl. Phys. Lett. 2003, 82, 3907.
6. Guo, D.; Ikeda, S.; Saiki, K.; Miyazoe, H.; Terashima, K. J. Appl. Phys. 2006, 99, 094502.
7. Ishii, H.; Sugiyama, K.; Ito, E.; Seki, K. Adv. Mater. 1999, 11, 605.
8. Chu, C.-W.; Li, S.-H.; Chen, C.-W.; Shrotriya, V.; Yang, Y. Appl. Phys Lett 2005, 87, 193508.
9. Waldauf, C.; Schilinsky, P.; Perisutti, M.; Hauch, J.; Brabec, C. J. Adv. Mater. 2003, 15, 2084.
10. Zheng, Y.; Qi, D.; Chandrasekhar, N.; Gao, X.; Troadec, C.; Wee, A. T. S. Langmuir 2007, 23, 8336.
11. Cheng, H. L.; Chou, W. Y.; Kuo, C. W.; Tang, F. C.; Wang, Y. W. J. Appl. Phys. Lett. 2006, 88, 161918.
12. Koyanagi, T.; Furukawa, S.; Tsutsui, K.; Wada, Y.; Furukawa, Y. Vib. Spectrosc. 2006, 42, 156.
13. Ye, H.; Huang, J.; Park, J.-R.; Katz, H. E.; Gracias, D. H. J. Phys. Chem. C 2007, 111, 13250.
14. Manaka, T.; Lim, E.; Tamura, R.; Iwamoto, M. Nat. Photonics 2007, 1, 581.
15. Manaka, T.; Liu, F.; Weis, M.; Iwamoto, M Phys. Rev. B 2008, 78, 121302.
16. Michaelson, H. B. IBM. J. Res. Dec. 1978, 22, 72.
17. Davids, P. S.; Campbell, I. H.; Smith, D. L. J. Appl. Phys. 1997, 82, 6319.
18. Snowden, C. M. Semiconductor device modelling; Peter Peregrinus: London, 1988.
19. Tessler, N.; Roichman, Y. J. Appl. Phys. Lett. 2001, 79, 2987.
20. Lampert, M. A.; Mark, P. Current injection in solid; Academic Press: New York, 1970.
21. Tamura, R.; Lim, E.; Manaka, T.; Iwamoto, M. J. Appl. Phys. 2006, 100, 114515.
22. Manaka, T.; Lim, E.; Tamura, R.; Iwamoto, M. Jpn. J. Appl. Phys. 2008, 47, 1301.
23. g = 60 V.
24. Yamada, D.; Manaka, T.; Lim, E.; Tamura, R.; Weis, M.; Iwamoto, M. J. Appl. Phys. 2008, 104, 074502.