Infrared imaging of the nanometer-thick accumulation layer in organic field-effect transistors

Nano Letters

Volumn 6, Issue 2, 2006, Pages 224-228

  Li, Z Q ^a   Wang, G M ^b   Sai, N ^a   Moses, D ^b   Marting, M C ^c   Di Ventra, M ^a   Heeger, A J ^b   Basov, D N ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE INSULATORS; INFRARED (IR) SPECTROMICROSCOPY; NANOMETER-THICK ACCUMULATION LAYERS;

ELECTRIC EXCITATION; ELECTRIC INSULATORS; INFRARED IMAGING; INFRARED SPECTROSCOPY; SEMICONDUCTOR DEVICES;

FIELD EFFECT TRANSISTORS;

POLY(3 HEXYLTHIOPHENE); POLY(3-HEXYLTHIOPHENE); THIOPHENE DERIVATIVE; TITANIUM; TITANIUM DIOXIDE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; EQUIPMENT DESIGN; INFRARED SPECTROPHOTOMETRY; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; PHYSICAL CHEMISTRY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; SURFACE PROPERTY;

CHEMISTRY, PHYSICAL; EQUIPMENT DESIGN; MEMBRANES, ARTIFICIAL; NANOTECHNOLOGY; PARTICLE SIZE; SENSITIVITY AND SPECIFICITY; SPECTROPHOTOMETRY, INFRARED; SURFACE PROPERTIES; THIOPHENES; TITANIUM; TRANSISTORS;

EID: 33644922727     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl052166+     Document Type: Article

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