Investigation of self-assembled monolayer treatment on SiO2 gate insulator of poly(3-hexylthiophene) thin-film transistors

Thin Solid Films

Volumn 518, Issue 2, 2009, Pages 642-646

  Horii, Yoshinori ^a,d   Ikawa, Mitsuhiro ^a   Sakaguchi, Koichi ^a   Chikamatsu, Masayuki ^a   Yoshida, Yuji ^a   Azumi, Reiko ^a   Mogi, Hiroshi ^b,c   Kitagawa, Masahiko ^d   Konishi, Hisatoshi ^d   Yase, Kiyoshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN CHEMICAL INNOVATION INSTITUTE   (Japan)

^c SHIN ETSU CHEMICAL CO LTD   (Japan)

^d TOTTORI UNIVERSITY   (Japan)

Author keywords

Docosyltrichlorosilane; Organic field effect transistor; Organic thin film transistor; Poly(3 hexylthiophene); Self assembled monolayer

Indexed keywords

DOCOSYLTRICHLOROSILANE; FIELD-EFFECT MOBILITIES; GATE INSULATOR; ON/OFF RATIO; ORGANIC FIELD-EFFECT TRANSISTOR; ORGANIC THIN-FILM TRANSISTOR; POLY(3-HEXYLTHIOPHENE); SURFACE FREE ENERGY;

CARRIER MOBILITY; FIELD EFFECT TRANSISTORS; FREE ENERGY; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; THIN FILM DEVICES;

THIN FILM TRANSISTORS;

EID: 70349881477     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.07.060     Document Type: Article

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