Al and Ti/Al contacts on n-GaN

Vacuum

Volumn 84, Issue 1, 2009, Pages 228-230

  Dobos, L ^a   Pecz B ^a   Toth L ^a   Horvath Zs J ^a   Horvath Z E ^a   Horvath E ^a   Toth A ^a   Beaumont, B ^b   Bougrioua, Z ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b LUMILOG   (France)

^c CRHEA CNRS   (France)

Author keywords

Electrical contacts; Electrical properties; GaN; Transmission electron microscopy

Indexed keywords

AFTER-HEAT TREATMENT; AL CONTACT; ALN; BARRIER HEIGHTS; C-PLANE SAPPHIRE SUBSTRATES; CHEMICAL VAPOUR DEPOSITION; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERISTIC; ELECTRICAL CONTACTS; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; GAN; GAN EPITAXIAL LAYERS; IN-VACUUM; INTERFACE PHASE; LINEAR CURRENTS; METAL LAYER; METAL ORGANIC; MICRO-STRUCTURAL; MOCVD; SCHOTTKY BARRIER HEIGHTS; XRD ANALYSIS;

ALUMINUM; ANNEALING; CHEMICAL VAPOR DEPOSITION; CORUNDUM; CURRENT VOLTAGE CHARACTERISTICS; DIFFRACTION; DISTILLATION; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRON MICROSCOPES; ELECTRONS; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT TRANSMISSION; METAL ANALYSIS; ORGANIC CHEMICALS; ORGANOMETALLICS; PHASE INTERFACES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING GALLIUM; THERMAL EVAPORATION; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ELECTRIC NETWORK ANALYSIS;

EID: 69349093144     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.04.022     Document Type: Article

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