Improvement in the bias stability of zinc oxide thin-film transistors using Si3N4 insulator with SiO2 interlayer

Thin Solid Films

Volumn 520, Issue 1, 2011, Pages 578-581

  Kim, Woong Sun ^a   Moon, Yeon Keon ^a   Kim, Kyung Taek ^a   Shin, Sae Young ^a   Park, Jong Wan ^a  

^a Hanyang University   (South Korea)

Author keywords

Gate insulator; Negative bias temperature instability (NBTI); Oxide interlayer; Oxide semiconductors; Plasma treatment; Silicon dioxide; Thin film transistors; Zinc oxide

Indexed keywords

BIAS STABILITY; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; GATE INSULATOR; NEGATIVE BIAS TEMPERATURE INSTABILITY; ON/OFF CURRENT RATIO; OXIDE SEMICONDUCTORS; PLASMA TREATMENT; STRESS TIME; SUBTHRESHOLD SWING; TRAP DENSITY; ZNO; ZNO THIN FILM;

INTEGRATED CIRCUITS; PLASMA APPLICATIONS; SILICA; SILICON; SILICON OXIDES; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; ZINC; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80054041118     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.07.015     Document Type: Article

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