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Volumn 13, Issue 4, 2010, Pages

Effect of surface treatment of gate-insulator on uniformity of bottom-gate ZnO thin film transistors

(9) Furuta, Mamoru a Nakanishi, Takashi b Kimura, Mutsumi b Hiramatsu, Takahiro a Matsuda, Tokiyoshi a Furuta, Hiroshi a Kawaharamura, Toshiyuki a Li, Chaoyang a Hirao, Takashi a

a KOCHI UNIVERSITY OF TECHNOLOGY (Japan)

b RYUKOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP ENERGY LEVELS; ELECTRICAL PROPERTY; GATE INSULATOR; INSULATOR SURFACES; NITROUS OXIDE; PLASMA TREATMENT; TRAP DENSITY; ZNO; ZNO THIN FILM;

ELECTRIC PROPERTIES; METALLIC FILMS; NITROGEN OXIDES; OPTICAL FILMS; PLASMA APPLICATIONS; THIN FILM TRANSISTORS; THIN FILMS; ZINC OXIDE;

SURFACE TREATMENT;

EID: 76749123487 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3290741 Document Type: Article

Times cited : (21)

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