Effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process

Solid State Phenomena

Volumn 145-146, Issue , 2009, Pages 363-366

  Sampurno, Yasa ^a,b   Zhuang, Yun ^a,b   Gu, Xun ^c   Theng, Sian ^a   Nemoto, Takenao ^c   Sun, Ting ^b   Sudargho, Fransisca ^a   Teramoto, Akinobu ^c   Philipossian, Ara ^a,b   Ohmi, Tadahiro ^c  

^a Araca Inc   (United States)

^b UNIVERSITY OF ARIZONA   (United States)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Brush; Citric acid; Cleaning process; Cleaning solutions; Down force; Frictional force; Post copper CMP; PVA; Rotational rate; Shear force; Slurry; Surfactant

Indexed keywords

ACIDS; BRUSHES; CITRIC ACID; COPPER; FRICTION; KINEMATICS; NANOTECHNOLOGY; SCRUBBERS; SILICON WAFERS; SLURRIES; SURFACE ACTIVE AGENTS;

CLEANING SOLUTION; COPPER CMP; DOWN FORCE; FRICTIONAL FORCES; ROTATIONAL RATES; SHEAR FORCE; SLURRY SURFACTANTS;

SURFACE CLEANING;

EID: 75849120065     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.145-146.363     Document Type: Conference Paper

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