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Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 12, 2011, Pages

Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy

(6) Wijnheijmer, A P a Garleff, J K a Teichmann, K b Wenderoth, M b Loth, S b,c Koenraad, P M a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

b UNIVERSITY OF GÖTTINGEN (Germany)

c IBM ALMADEN RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80053900108 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.84.125310 Document Type: Article

Times cited : (27)

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