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Journal of Vacuum Science and Technology B

Volumn 28, Issue 6, 2010, Pages 1086-1092

Influence of the tip work function on scanning tunneling microscopy and spectroscopy on zinc doped GaAs

(4) Wijnheijmer, A P a Garleff, J K a Heijden, M A V D a Koenraad, P M a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SCANNING TUNNELING MICROSCOPY; ZINC;

DI/DV SPECTRA; FLAT-BAND VOLTAGE; SCANNING TUNNELLING MICROSCOPY AND SPECTROSCOPY; SPECTROSCOPY DATA; TOPOGRAPHY IMAGES; ZINC DOPED;

WORK FUNCTION;

EID: 78650158086 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3498739 Document Type: Article

Times cited : (11)

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