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Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 7, 2011, Pages

Bistable behavior of silicon atoms in the (110) surface of gallium arsenide

(4) Garleff, J K a Wijnheijmer, A P a Denden, C N a Koenraad, P P M a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80052400696 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.84.075459 Document Type: Article

Times cited : (20)

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