The development of titanium silicide-boron-doped polysilicon resistive temperature sensors

Journal of Micromechanics and Microengineering

Volumn 21, Issue 10, 2011, Pages

  Vereshchagina, E ^a   Wolters, R A M ^a,b   Gardeniers, J G E ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; ELECTRICAL CHARACTERIZATION; FABRICATION METHOD; HIGH TEMPERATURE; LINEAR DEPENDENCE; TEMPERATURE SENSING; THERMAL AND ELECTRICAL STABILITY; THIN FILM RESISTORS; TITANIUM SILICIDE;

BORON; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; THIN FILMS; TITANIUM; TITANIUM COMPOUNDS;

TEMPERATURE SENSORS;

EID: 80053618503     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/21/10/105022     Document Type: Article

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