Study on the application of silicide in surface micromachining

Journal of Micromechanics and Microengineering

Volumn 12, Issue 2, 2002, Pages 162-167

  Li, Zhihong ^a,b   Zhang, Guobing ^a   Wang, Wei ^a   Hao, Yilong ^a   Li, Ting ^a   Wu, Guoying ^a  

^a PEKING UNIVERSITY   (China)

^b University of California Davis   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RESIDUE STRESS; SHEET RESISTIVITY; SILICIDE; STRUCTURAL POLYSILICON LAYER; SURFACE MICROMACHINING;

COBALT COMPOUNDS; ELECTRIC CONDUCTIVITY; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; PLATINUM COMPOUNDS; STRESSES; SURFACE STRUCTURE; SURFACES;

SILICON COMPOUNDS;

EID: 0036466249     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/12/2/310     Document Type: Article

References (23)

1. Electrostatic-comb drive of lateral polysilicon resonators
2. Silicon as a mechanical material
3. 5-level polysilicon surface micromachine technology: Application to complex mechanical systems
4. Micromachined devices for wireless communications
5. RF MEMS from a device perspective
6. A 1.9-GHz CMOS VCO with micromachined electromechanically tunable capacitors
7. High Q inductors for wireless applications in a complementary silicon bipolar process
8. Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates
9. Copper-encapsulated silicon micromachined structures
10. Mechanical behavior of aluminum and copper thin films
11. Integrated magnetic microrelays: Normally open, normally closed, and multi-pole devices
12. Micromechanical switches fabricated using nickel surface micromachining
13. A micromachined variable capacitor for monolithic low noise VCO's
14. Characterization of shallow silicide junctions for sub-quarter micron ULSI technology-extraction of silicidation induced Schottky contact area
15. Impact of cobalt silicidation on the low-frequency noise behavior of shallow P-N junctions
16. Metal silicides: Active elements of ULSI contacts
17. 2 film for CMOS salicide
18. Comparison of transformation to low-resistivity phase and agglomeration of TiSi and CoSi
19. A thermally stable Ti-W salicide for deep-submicron logic with embedded DRAM
20. Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films