Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

Journal of Micromechanics and Microengineering

Volumn 21, Issue 10, 2011, Pages

  Liu, Yu Chia ^a   Tsai, Ming Han ^a   Tang, Tsung Lin ^a   Fang, Weileun ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVE ACCELEROMETERS; CMOS-MEMS; CMOS-MEMS ACCELEROMETER; DETECTABLE SIGNAL; ELECTROPLATED NICKEL; ELECTROPLATING TECHNIQUE; LOW TEMPERATURES; MEMS-STRUCTURE; METAL ELECTROPLATING; METAL LAYER; NICKEL ELECTROPLATING; NOISE FLOOR; POST-CMOS; SEED LAYER; SIMPLE APPROACH; STANDARD CMOS; STRUCTURE DEFORMATION; TEMPERATURE VARIATION;

ACCELEROMETERS; FOUNDRIES; NICKEL PLATING;

ELECTROPLATING;

EID: 80053611393     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/21/10/105005     Document Type: Article

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