Process development for CMOS-MEMS sensors with robust electrically isolated bulk silicon microstructures

Journal of Microelectromechanical Systems

Volumn 16, Issue 5, 2007, Pages 1152-1161

  Qu, Hongwei ^a,b   Xie, Huikai ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b Oakland University   (United States)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Complementary metal oxide semiconductor microelectromechanical system (CMOS MEMS); Contaminations; Deep reactive ion etching (DRIE); Integrated sensors; Overheating; Single crystal silicon (SCS) microstructures; Undercut

Indexed keywords

ACCELEROMETERS; CONTAMINATION; MEMS; MICROSTRUCTURE; PHOTORESISTS; PLASMA ETCHING; REACTIVE ION ETCHING; SILICON SENSORS; SINGLE CRYSTALS;

SENSOR MICROSTRUCTURE; SILICON UNDERCUT; THERMAL MODELING;

CMOS INTEGRATED CIRCUITS;

EID: 34948892097     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2007.906079     Document Type: Article

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