Implementation of a monolithic single proof-mass tri-axis accelerometer using CMOS-MEMS technique

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1670-1679

  Sun, Chih Ming ^a   Tsai, Ming Han ^a   Liu, Yu Chia ^a   Fang, Weileun ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Complementary metal oxide semiconductor (CMOS) MEMS; tri axis accelerometer

Indexed keywords

ACCELEROMETER CHIPS; CAPACITIVE TYPE; CMOS-MEMS; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS)-MEMS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CROSS-AXIS SENSITIVITY; DIE SIZE; IN-CHIP; MEASUREMENT RANGE; MEMS-STRUCTURE; MICROELECTROMECHANICAL SYSTEM ACCELEROMETERS; NOISE FLOOR; NON-LINEARITY; OUT-OF-PLANE; SENSING CIRCUITS; THREE AXES; TRI-AXIS ACCELEROMETER;

COMPOSITE MICROMECHANICS; MEMS; METALLIC COMPOUNDS; MICROELECTROMECHANICAL DEVICES; MOS DEVICES; SERPENTINE; SILICATE MINERALS; TRANSISTORS;

ACCELEROMETERS;

EID: 77954033146     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2048791     Document Type: Article

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