A novel SiC MEMS apparatus for in situ uniaxial testing of micro/nanomaterials at high temperature

Journal of Micromechanics and Microengineering

Volumn 21, Issue 10, 2011, Pages

  Kang, Wonmo ^a   Saif, M Taher A ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION PROCEDURE; DESIGN PARAMETERS; ELECTRICAL CURRENT; EXPERIMENTAL STUDIES; GRIPPING MECHANISMS; HEAT SOURCES; HIGH TEMPERATURE; IN-SITU; IN-SITU TEST; IRREGULAR SURFACE; MEMS STAGE; MICROSAMPLES; SAMPLE LENGTH; SAMPLE RESISTANCE; SAMPLE TEMPERATURE; SINGLE CRYSTAL SILICON; STRESS-STRAIN RESPONSE; TEMPERATURE DIFFERENCES; TEMPERATURE PROFILES; THERMO-MECHANICAL TESTING; UNIAXIAL TESTING; UNIAXIAL TESTS;

JOULE HEATING; MECHANICAL TESTING; SILICON WAFERS; SINGLE CRYSTALS; STRESSES; TEMPERATURE CONTROL; TEMPERATURE SENSORS;

SILICON CARBIDE;

EID: 80053606301     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/21/10/105017     Document Type: Article

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