Fracture strength of single-crystal silicon carbide microspecimens at 24 °C and 1000 °C

Journal of Microelectromechanical Systems

Volumn 17, Issue 1, 2008, Pages 244-254

  Sharpe Jr , William N ^a   Beheim, Gleen M ^b   Evans, Laura J ^b   Nemeth, Noel N ^b   Jadaan, Osama M ^c  

^a JOHNS HOPKINS UNIVERSITY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c UNIVERSITY OF WISCONSIN PLATTEVILLE   (United States)

Author keywords

Ceramics; Material testing; Silicon carbide (SiC); Temperature

Indexed keywords

FRACTOGRAPHY; FRACTURE TOUGHNESS; REACTIVE ION ETCHING; SINGLE CRYSTALS; STRESS CONCENTRATION; TENSILE TESTING; THERMAL EFFECTS; WEIBULL DISTRIBUTION;

CURVED SPECIMENS; HOLE SPECIMENS;

SILICON CARBIDE;

EID: 40449118383     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2007.912727     Document Type: Article

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