Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells

Thin Solid Films

Volumn 519, Issue 24, 2011, Pages 8501-8504

  Suemasu, Takashi ^a   Saito, Takanobu ^a   Toh, Katsuaki ^a   Okada, Atsushi ^a   Khan, Muhammad Ajmal ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

BaSi2; Photoresponsivity; Solar cell; Tunnel junction

Indexed keywords

BASI2; EXTERNAL QUANTUM EFFICIENCY; PHOTORESPONSES; PHOTORESPONSIVITY; REVERSE BIAS VOLTAGE; ROOM TEMPERATURE; SI (1 1 1); THIN-FILM SOLAR CELLS;

EFFICIENCY; EPITAXIAL FILMS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SOLAR CELLS; TUNNEL JUNCTIONS;

QUANTUM EFFICIENCY;

EID: 80053575064     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.05.028     Document Type: Conference Paper

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