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Volumn 3, Issue 2, 2010, Pages

Fabrication of n+-BaSi2/p+-Si tunnel junction on Si(111) surface by molecular beam epitaxy for photovoltaic applications

(7) Saito, Takanobu a Matsumoto, Yuta a Suzuno, Mitsushi a Takeishi, Michitoshi a Sasaki, Ryo a Suemasu, Takashi a,b Usami, Noritaka c

a UNIVERSITY OF TSUKUBA (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LOW RESISTANCE; PHOTORESPONSIVITY; PHOTOVOLTAIC APPLICATIONS; REVERSE BIAS; SI (1 1 1); TEMPLATE LAYERS;

CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SILICIDES; SILICON; WIND TUNNELS;

TUNNEL JUNCTIONS;

EID: 76949097545 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.021301 Document Type: Article

Times cited : (34)

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