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Volumn 13, Issue 12, 2010, Pages

Improvement in electrical stress stability of indium zinc oxide TFTs after low temperature postanneals

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; BAND GAPS; DEFECT STATE; ELECTRICAL STRESS; ELEVATED TEMPERATURE; INDIUM ZINC OXIDES; LOW TEMPERATURES; OPERATION TEMPERATURE; SEMICONDUCTOR/INSULATOR INTERFACES; STATE DENSITIES; SUBTHRESHOLD SWING; TURN ON VOLTAGE;

EID: 77958552851     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3487930     Document Type: Article
Times cited : (13)

References (15)
  • 8
    • 77951531173 scopus 로고    scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.3387819
    • E. Chong, K. C. Jo, and S. Y. Lee, Appl. Phys. Lett. APPLAB 0003-6951, 96, 152102 (2010). 10.1063/1.3387819
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 152102
    • Chong, E.1    Jo, K.C.2    Lee, S.Y.3
  • 15
    • 43749115053 scopus 로고    scopus 로고
    • C. Kagan and P. Andy, Editors, Marcel Dekker, New York
    • J. Kanichi and S. Martin, in Thin Film Transistors, C. Kagan, and, P. Andy, Editors, p. 87, Marcel Dekker, New York (2003).
    • (2003) Thin Film Transistors , pp. 87
    • Kanichi, J.1    Martin, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.