Turn-around effect of Vth shift during the positive bias temperature instability of the n-type transistor with HfOxNy gate dielectrics

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1479-1481

  Jung, Hyung Suk ^a,b   Rha, Sang Ho ^a   Kim, Hyo Kyeom ^a   Kim, Jeong Hwan ^a   Won, Seok Jun ^a   Lee, Joohwi ^a   Lee, Sang Young ^a   Hwang, Cheol Seong ^a   Park, Jung Min ^b   Kim, Weon Hong ^b   Song, Min Woo ^b   Lee, Nae In ^b  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Hafnium oxynitride (HfOxNy); metal oxide semiconductor field effect transistor (MOSFET); positive bias temperature instability (PBTI); turn around

Indexed keywords

ATOMIC LAYER DEPOSITED; ELECTRON HOLE PAIRS; ELECTRON TRAPPING; HAFNIUM OXYNITRIDE; HOLE TRAPPING; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NEGATIVE VOLTAGE; POSITIVE BIAS TEMPERATURE INSTABILITIES; POSITIVE GATE BIAS; POSITIVE VOLTAGE; SURFACE PLASMONS; TRAP SITES; TURN-AROUNDS;

BIAS VOLTAGE; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; IMPACT IONIZATION; MOSFET DEVICES; NITRIDES;

GATE DIELECTRICS;

EID: 78649444984     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2078792     Document Type: Article

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